Effects of surface orientation and body thickness on the performance of III-V ultrathin-body nMOSFETs

  • Tsung-Hsing Yu
  • Published 2017 in
    2017 International Conference on Simulation of…

Abstract

This work proposes a theoretical investigation of different channel materials, (111) and (100) two surface orientations, and body thickness effects on the performance of III-V ultrathin-body FETs. A simulation methodology is presented based on in-house empirical tight-binding and top-of- the-barrier models. Simulation results indicate that (100) ballistic… (More)

Topics

Cite this paper

@article{Yu2017EffectsOS, title={Effects of surface orientation and body thickness on the performance of III-V ultrathin-body nMOSFETs}, author={Tsung-Hsing Yu}, journal={2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)}, year={2017}, pages={229-232} }