Effects of sputtering and annealing temperatures on MOS capacitor with HftiOn gate dielectric

Abstract

In this work, Al/HfTiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift… (More)

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