Effects of side reservoirs on the electromigration lifetime of copper interconnects

Abstract

A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to “trap” migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to ‘trap’ pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.

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Cite this paper

@article{Mario2011EffectsOS, title={Effects of side reservoirs on the electromigration lifetime of copper interconnects}, author={Hendro Mario and Chee Lip Gan and Yeow Kheng Lim and Juan Boon Tan and Jun Wei and Tongjai Chookajorn and Carl V. Thompson}, journal={18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, year={2011}, pages={1-4} }