Effects of low ion dose on SE imaging and orientation dependent Ga-ion channeling

@inproceedings{Saraf2015EffectsOL,
  title={Effects of low ion dose on SE imaging and orientation dependent Ga-ion channeling},
  author={Laxmikant Saraf},
  year={2015}
}
Abstract Grain contrasts produced during ion induced secondary electron imaging depend upon grain orientation and ability of Ga-ion beam to channel in it. The current study aims to investigate critical Ga-ion dose for Ni-alloy where a transition from grain surface imaging to sputtering dominated Ga-ion channeling occurs. It is observed that critical dose is in the vicinity of 10 15  ions/cm 2 . Strong orientation dependent Ga-ion channeling effects were observed at dose values higher than 10 17… CONTINUE READING