Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

@inproceedings{Lin2019EffectsOG,
  title={Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices},
  author={Yow-Jon Lin and Chang-lin Wu and Zun-Yuan Ke and Hsing-Cheng Chang},
  year={2019}
}
This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However… CONTINUE READING