Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

Abstract

For the low voltage power MOSFETs, the power loss and the switching frequency are the most important parameters, the two are separately determined by the conduction resistance RDS(on) and the gate charge QG. The gate charge mainly depends on the gate to drain charge QGD. The so-called figure-of-merit, which is defined as the product of the RDS(on) and QGD… (More)

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