Effects of free carriers on piezoelectric nanogenerators and piezotronic devices made of GaN nanowire arrays.

@article{Wang2014EffectsOF,
  title={Effects of free carriers on piezoelectric nanogenerators and piezotronic devices made of GaN nanowire arrays.},
  author={Chao-Hung Wang and Wei-Shun Liao and Nai-Jen Ku and Yi-Chang Li and Yen-Chih Chen and L. Tu and Chuan-Pu Liu},
  journal={Small},
  year={2014},
  volume={10 22},
  pages={4718-25}
}
This study investigates the role of carrier concentration in semiconducting piezoelectric single-nanowire nanogenerators (SNWNGs) and piezotronic devices. Unintentionally doped and Si-doped GaN nanowire arrays with various carrier concentrations, ranging from 10(17) (unintentionally doped) to 10(19) cm(-3) (heavily doped), are synthesized. For SNWNGs, the output current of individual nanowires starts from a negligible level and rises to the maximum of ≈50 nA at a doping concentration of 5.63… CONTINUE READING