Effects of fin width on performance and reliability for N- and P-type FinFETs

@article{Yeh2016EffectsOF,
  title={Effects of fin width on performance and reliability for N- and P-type FinFETs},
  author={Wen-Kuan Yeh and Wenqi Zhang and Chia-Hung Shih and Yi-Lin Yang},
  journal={2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)},
  year={2016},
  pages={361-364}
}
In this work, the effect of fin width on device performance and reliability for high-k/metal tri-gate n/p-type FinFETs was investigated including electrical characteristic clarification and simulation. Carrier conduction in the trapezoidal shape Si-fin body of FinFETs is different for devices with different fin bottom widths (WFin_bottom), which will affect device properties. For n-type FinFETs, the experimental results show that thinner WFin_bottom device performs better reliability under HCI… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 18 REFERENCES

A study of negativebias temperature instability of SOI and body-tied FinFETs,

H. Lee, C.-H. Lee, D. Park, Y.-K. Choi
  • IEEE Electron Device Lett., vol. 26,
  • 2005
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL

Intel’s Revolutionary 22 nm Transistor Technology

M. Bohr
  • Intel Newsroom,
  • 2011
VIEW 1 EXCERPT

Similar Papers

Loading similar papers…