Effects of fin width on memory windows in FinFET ZRAMs

Abstract

Due to their relatively high performance and increased immunity against short-channel effects as compared to bulk silicon MOSFETs, FinFETs on silicon on insulator (SOI) substrates are being investigated intensively as promising candidates for ultimately scaled CMOS devices in applications at and beyond the 22 nm technology node. To this end, it has been… (More)

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