Effects of elevated junction temperature on the RF-properties of optimised IMPATTs: Estimation of frequency chirp-bandwidth during pulsed-operation

@article{Chakraborty2011EffectsOE,
  title={Effects of elevated junction temperature on the RF-properties of optimised IMPATTs: Estimation of frequency chirp-bandwidth during pulsed-operation},
  author={Diptadip Chakraborty and Moumita Mukherjee},
  journal={2011 3rd International Conference on Electronics Computer Technology},
  year={2011},
  volume={2},
  pages={150-154}
}
Elevated junction temperature effects on W-band double-drift (p p n n) Si IMPATT diode for high-power pulsed-mode operation is investigated through a modified simulation technique. It is observed that the diodes have a specific optimum temperature range of operation, to achieve a stable and high RF-power operation. The authors have made a detailed analysis… CONTINUE READING