Effects of electrostatic discharge on GaAs-based HBTs

  • T. Henderson
  • Published 1997 in
    GaAs IC Symposium. IEEE Gallium Arsenide…

Abstract

Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.

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Cite this paper

@article{Henderson1997EffectsOE, title={Effects of electrostatic discharge on GaAs-based HBTs}, author={T. Henderson}, journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997}, year={1997}, pages={147-150} }