Effects of different Ar/O2 ratios on the electrical properties of CuPc-based TFTs with ZrO2 gate dielectric

@article{Tang2011EffectsOD,
  title={Effects of different Ar/O2 ratios on the electrical properties of CuPc-based TFTs with ZrO2 gate dielectric},
  author={W. M. Tang and M. T. Greiner and M. G. Helander and Z. H. Lu and W. T. Ng},
  journal={2011 IEEE International Conference of Electron Devices and Solid-State Circuits},
  year={2011},
  pages={1-2}
}
CuPc-based TFTs with high-k dielectric ZrO2 as gate dielectric prepared by RF magnetron sputtering with various Ar/O2 ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a… CONTINUE READING