Effects of annealing on charge in HfO2 gate stacks

@inproceedings{Zhang2005EffectsOA,
  title={Effects of annealing on charge in HfO2 gate stacks},
  author={Zhiyou Zhang and Miaochun Li and Stephen A. Campbell},
  year={2005}
}
This letter presents a systematic investigation of charge in HfO 2 gate stacks. Assuming that the majority of charge is associated with the stack interfaces, it is found that the charge at the HfO 2 /interfacial layer (IL) interface is negative while the charge at the Si/IL interface is positive. In general, the calculated charge densities at both interfaces are of order 10 12 cm -2 . A forming gas anneal (FGA) reduces the interface charge greatly at both interfaces. However, the FGA… CONTINUE READING

Citations

Publications citing this paper.

Effect of deposition chemistry and annealing on charge in HfO/sub 2/ stacks

  • IEEE Electron Device Letters
  • 2006
VIEW 3 EXCERPTS
CITES METHODS & BACKGROUND
HIGHLY INFLUENCED