Effects of ambipolar excess carrier diffusion in pulsed laser annealing of semiconductors


We present the results of a time-resolved Raman study of lattice temperature following excitation by an 8-nsec pulsed laser with energy densities in the 1-J/cm2 range. The results show that the lattice temperature always remains far below the melting point of crystalline silicon even though an enhanced reflectivity phase is observed.' In addition, we… (More)


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