## Two-dimensional quantum mechanical simulation of gate leakage current of nanoscale MOSFETs

- Hao Wang, Gaofeng Wang, Sheng Chieh Chang
- 2010 IEEE International Conference of Electron…
- 2010

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@inproceedings{Hakim2001EffectsON, title={Effects of Neglecting Carrier Tunneling on Electrostatic Potential in Calculating Direct Tunneling Gate Current in Deep Submicron MOSFETs}, author={M. Mojammel Al Hakim and A. Haque}, year={2001} }

- Published 2001

We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relative error in gate current due to neglecting carrier tunneling is higher at higher gate voltages and increases… CONTINUE READING