Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors

@inproceedings{Cheng1997EffectsON,
  title={Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors},
  author={Huang-Chung Cheng and Fang-Shing Wang and Chun-Yao Huang},
  year={1997}
}
The NH/sub 3/-plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT's), It is found that the TFT's after the NH/sub 3/-plasma passivation achieve better device performance, including the off-current below 0.1 pA//spl mu/m and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability than the H/sub 2/-plasma devices. Based on optical emission spectroscopy (OES) and secondary ion mass spectroscopy (SIMS) analysis, these… CONTINUE READING

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