Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

@article{Lauenstein2011EffectsOI,
  title={Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs},
  author={J.-M. Lauenstein and N.. Goldsman and Sandra Liu and J. L. Titus and R. L. Ladbury and H. S. Kim and A. M. Phan and K A Label and Max Zafrani and Phillip Sherman},
  journal={IEEE Transactions on Nuclear Science},
  year={2011},
  volume={58},
  pages={2628-2636}
}
The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed. 
Highly Cited
This paper has 30 citations. REVIEW CITATIONS