Corpus ID: 237385653

Effects of Interfacial Distance and Electric Field on Graphene-Silicene Hybrid Structures

  title={Effects of Interfacial Distance and Electric Field on Graphene-Silicene Hybrid Structures},
  author={K M Abeywickrama and P. K. D. Duleepa P. Pitigala and W W P De Silva},
Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices can be integrated via graphene-silicene (Gra/si) hybrid structures. These electronic applications are mostly based on the ability of tuning the band gap via electronic structure deformation that is expected to be achieved by multilayer stacking, applying… Expand

Figures from this paper


Substrate-induced bandgap opening in epitaxial graphene.
It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. Expand
Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.
It is demonstrated that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias and can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. Expand
Structural, electronic, and optical properties of hybrid silicene and graphene nanocomposite.
It turns out that weak van der Waals interactions dominate between silicene and graphene with their intrinsic electronic properties preserved, and interlayer interactions in hybrid S/G nanocomposite induce tunable p-type and n-type doping of silicenes and graphene, respectively, showing their doping carrier concentrations can be modulated by their interfacial spacing. Expand
Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene
The electronic screening effect was also found to be enhanced with increasing lateral shift, apparently indicating that the massless helical and massive chiral fermions are responsible for the perfect and imperfect electronic screening, respectively. Expand
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
This work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules. Expand
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decompositionExpand
Large-scale pattern growth of graphene films for stretchable transparent electrodes
The direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers is reported, and two different methods of patterning the films and transferring them to arbitrary substrates are presented, implying that the quality of graphene grown by chemical vapours is as high as mechanically cleaved graphene. Expand
An atlas of two-dimensional materials.
This Atlas demonstrates the large diversity of electronic properties, including band gaps and electron mobilities of atomically thin materials, as well as rare earth, semimetals, transition metal chalcogenides and halides, and finally synthetic organic 2D materials, exemplified by 2D covalent organic frameworks. Expand
From graphene to graphite : Electronic structure around the K point
Within a tight-binding approach we investigate how the electronic structure evolves from a single graphene layer into bulk graphite by computing the band structure of one, two, and three layers ofExpand
Two- and one-dimensional honeycomb structures of silicon and germanium.
First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures, which show remarkable electronic and magnetic properties, which are size and orientation dependent. Expand