Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

@article{Laird2006EffectsOG,
  title={Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode},
  author={J. Laird and Shinobu Onoda and T. Hirao and Heidi Becker and Allan Johnston and Hiroshi Itoh},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={3786-3793}
}
Effects of displacement and ionization damage on the impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode was investigated using a picosecond laser system. Damage was generated using either Co60 gamma-irradiation or by scanning the device with an MeV ion microbeam. No shift in the impulse response characteristics and gain was… CONTINUE READING