Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs

@article{Lin2013EffectsOF,
  title={Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs},
  author={Cheng-Li Lin and Po-Hsiu Hsiao and Wen-Kuan Yeh and Han-Wen Liu and Syuan-Ren Yang and Yu-Ting Chen and Kun-Ming Chen and Wen-Shiang Liao},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={3639-3644}
}
This paper investigates the impact of fin width ( Wfins = 15, 20, and 25 nm) in a double-gate n-type FinFET on the performance and reliability of the device. Carrier conduction in the Si-fin body of FinFETs with various Wfins is also studied. The experimental results show that the threshold voltage and drain current of n-type FinFETs increases and decreases, respectively, as Wfin is reduced. A thinner Wfin FinFET exhibits greater immunity to short channel effects. In addition, according to the… CONTINUE READING
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