Effects of Epoxy Molding Compound on Electrical Resistance Degradation of Pd-Coated Cu Wire Bonds in the 175 °C to 225 °C Range

@article{Hook2018EffectsOE,
  title={Effects of Epoxy Molding Compound on Electrical Resistance Degradation of Pd-Coated Cu Wire Bonds in the 175 °C to 225 °C Range},
  author={Michael David Hook and Michael Mayer and Stevan Hunter},
  journal={2018 IEEE 68th Electronic Components and Technology Conference (ECTC)},
  year={2018},
  pages={1427-1433}
}
  • M. Hook, M. Mayer, S. Hunter
  • Published 1 May 2018
  • Materials Science
  • 2018 IEEE 68th Electronic Components and Technology Conference (ECTC)
We present electrical resistance measurements of PCC wires bonded to Al pads and aged at temperatures of 175 °C, 200 °C, and 225 °C. Wires were arranged to enable four-wire measurements of pairs of wires in series, and monitored throughout the aging process. The wires used were 25 µm diameter PCC and bare Cu. Bonded ball diameters were 61 µm and 75 µm, and the mean ball shear strength was between 120 MPa and 130 MPa for all of the bond groups. We tested samples without encapsulation or with one… 
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References

SHOWING 1-7 OF 7 REFERENCES
Factors affecting activation energy for pd-coated cu ball bond resistance degradation on Al bond pads in high temperature storage
Copper wire bonds have become a mainstay in many electronics areas, including automotive, where more data is needed regarding the reliability of Cu wire bonds on Al pads in high temperature
Copper Ball Voids for Pd-Cu Wires: Affecting Factors and Methods of Controlling
Bare copper wire has presented several challenges to both first and second bond wire bonding processes, such as Cu-Al intermetallic compound (IMC) corrosion induced by the mobile chlorine in the
High Reliability Challenges with Cu Wire Bonding for Automotive Devices in the AEC-Q006
Copper (Cu) wires are increasingly used in semiconductor devices to provide cost-effective packaging. With its excellent electrical properties, copper has higher mechanical properties than gold (Au)
Symmetric miniaturized heating system for active microelectronic devices.
TLDR
A miniaturized heating system (minioven) is presented, which can heat individual IC packages containing the interconnects to be tested and subject the device to thermal cycling and measure the decrease of interconnect quality.
The Paradoxical Role of Sulphur in Molding Compounds: Influence on High Temperature Reliability of Cu-Al Wirebond Interconnects
This paper describes the role of sulphur on corrosion phenomena at the interface between the Cu ball and Al bondpad. Sulphur is usually linked to the adhesion promotor which is used to improve
High Temperature Storage Reliability of Bond Resistance of Palladium-Coated Copper Ball Bonds
Abstract Reliability of wire bonds made with palladium-coated copper (PCC) wire of 25 μm diameter is studied by measuring the wire bond resistance increase over time in high temperature storage at ...
Accelerating reliability assessment with multioven racks and sensor chips for wire bonds
  • Presented at IMAPS New England Symposium, May 2015. [10] L. Bantis. (2012) Accelerated failure time models. MathWorks. [Online]. Available: https://www.mathworks.com/matlabcentral/fileexchange/ 38118-accelerated-failure-time--aft--models 1433
  • 2015