Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes

@inproceedings{Monroy1999EffectsOB,
  title={Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes},
  author={Eva Monroy and Fernando Calle and El{\'i}as Miguel Mu{\~n}oz and F. Omn{\`e}s},
  year={1999}
}
We report on the fabrication and characterization of AlGaN MSM photodetectors, which show a low dark current density and a sharp cutoff, with a visible rejection of four to five orders of magnitude, at 5 V bias. The devices behave linearly with optical power, for illumination over and below the bandgap. The study of the responsivity of AlGaN MSM photodiodes reveals a gain mechanism which is only active at bias over 2 V, and for excitation over the bandgap. This mechanism is responsible for the… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-5 OF 5 CITATIONS

AlGaN quadruple-band photodetectors

  • 2009 IEEE LEOS Annual Meeting Conference Proceedings
  • 2009
VIEW 5 EXCERPTS
CITES BACKGROUND
HIGHLY INFLUENCED

High-speed solar blind MSM-photodetectors

  • 2005 15th International Crimean Conference Microwave & Telecommunication Technology
  • 2005
VIEW 1 EXCERPT

Analysis of I-V measurements on Pt/Au-GaN Schottky contacts in a wide temperature range

D. Donoval, V. B. Kulikov, P. Beno, J. Racko
  • The Fourth International Conference on Advanced Semiconductor Devices and Microsystem
  • 2002