Effects of Al Pad Deformation and TiW Barrier Layer on Copper-to-Silicon Diffusion and Intermetallic Compound Formation in Copper Wire Bonding

@article{Zhang2006EffectsOA,
  title={Effects of Al Pad Deformation and TiW Barrier Layer on Copper-to-Silicon Diffusion and Intermetallic Compound Formation in Copper Wire Bonding},
  author={Songsong Zhang and Chaoping Chen and Rosana Lee},
  journal={2006 11th International Symposium on Advanced Packaging Materials: Processes, Properties and Interface},
  year={2006},
  pages={189-195}
}
Cu wire bonding attracts great attention in recent years due to its many advantages over Au and Al wire bonding. However, Cu is a fast diffuser in Si compared with Au and Al and may impose more threats to Si devices. Therefore, Cu-to-Si diffusion and its correlation with intermetallic compound (IMC) formation in wire bonding should be investigated. In this study, Cu-to-Si diffusion and IMC formation are studied in real diode devices. The effect of Al pad deformation to Cu diffusion is… CONTINUE READING

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Effect of Heat Treatment on The Shear Strength and Fracture Modes of Copper Wire Thermosonic Ball Bonds to Al - 1 % Si Device Metallisation "

W. J. Tomlinson, R. V. Winkle, L. A. Blackmore
IEEE Transactions on Components , Hybrids , and Manufacturing Technology • 1990

Mechanical and Electrical Properties of Au - Al and CuAl Intermetallics Layer at Wire Bonding Interface

A. R. Daud
Journal of Electronic Packaging

Physics of Copper in Silicon

A. A. Istratov, E. R. Weber
Journal of The Electrochemical Society