Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature

  title={Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature},
  author={Tomoaki Doi and T. Fukaishi and Chiaki Hiramatsu and Takanori Wakita and Masaaki Hirai and Yuji Muraoka and Takayoshi Yokoya and Y. Kato and Yudai Izumi and Takayuki Muro and Yusuke Tamenori},
  journal={Diamond and Related Materials},

Synthesis of Diamond on SiC by Microwave Plasma Chemical Vapor Deposition: Comparison of Silicon-Face and Carbon-Face

Diamond is arguably the best candidate material for heat dissipation applications, especially in high-power electronic devices. Silicon carbide (SiC) is a kind of wide band gap material, which can be

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence



Superconductivity in diamond

Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature Tc ≈ 4 K; superconductivity survives in a magnetic field up to Hc2(0) ≥ 3.5 T.

Superconductivity in diamond thin films well above liquid helium temperature

We report unambiguous evidence for superconductivity in a heavily boron-doped diamond thin film grown by microwave plasma-assisted chemical vapor deposition (MPCVD). An advantage of the

Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier

Soft X-ray Core-Level Photoemission Study of Boron Sites in Heavily Boron-Doped Diamond Films

We have performed high-resolution soft x-ray B 1 s core-level photoemission spectroscopy of heavily boron-doped diamond films in order to study the chemical sites of doped-boron atoms and their

X-ray photoemission studies of diamond, graphite, and glassy carbon valence bands

The high-resolution x-ray photoemission spectra (XPS) of the total valence bands of atomically clean diamond, graphite, and glassy carbon, obtained with monochromatized Al K ..cap alpha.. radiation,

Diamond deposition on cemented carbide by chemical vapour deposition using a tantalum filament

Diamond deposition on WC-Co cemented carbide was examined by chemical vapour deposition using a tantalum filament. The filament was much superior to conventional tungsten filament for

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

  • 2004