Effective radius models of nanoscale elliptical Surrounding-Gate MOSFETs

Effective radius models for the nanoscale elliptical Surrounding-Gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are developed. The characteristics of the elliptical SG MOSFET are simulated with TCAD simulation tools, the electric potential, drain to source current, and the subthreshold swing are investigated. The simple effective… CONTINUE READING