Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

@inproceedings{Kakiuchi2013EffectivePC,
  title={Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors},
  author={Hironori Kakiuchi and Hiromasa Ohmi and Takahiro Yamada and Akiyuki Hirano and Tomohito Tsushima and Win-Li Lin and Kiyoshi Yasutake},
  year={2013}
}
Abstract Hydrogenated amorphous silicon ( a -Si) and microcrystalline silicon ( μc -Si) films were grown in atmospheric-pressure (AP) He/H 2 /SiH 4 plasma excited by a 150-MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations in thickness and crystallinity of the deposited Si films along the gas flow direction were studied as functions of gas residence time in the plasma, VHF power density and H 2 flow rate. Furthermore, the electrical characteristics of bottom-gate… CONTINUE READING