Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

  title={Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing},
  author={Jin-Aun Ng and Nobuyuki Sugii and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  journal={IEICE Electronic Express},
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 ◦C – 600 ◦C) and ambient (N2 or O2). High effective mobility of 312 cm2/Vs and low interface-state density of 6 × 1010 cm−2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 ◦C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10−6… CONTINUE READING


Publications referenced by this paper.
Showing 1-10 of 12 references

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

  • A. Toriumi, K. Iwamoto, +7 authors H. Satake
  • Microelectron. Eng., vol. 80, pp. 190–197, June…
  • 2005
Highly Influential
3 Excerpts

Charge accumulation and mobility in thin dielectric MOS transistors

  • C. G. Sodini, T. W. Ekstedt, J. L. Moll
  • Solid-State Electron., vol. 25, no. 9, pp. 833…
  • 1982
Highly Influential
4 Excerpts

Mobility degradation analysis for La2O3 nMISFET

  • J.-A. Ng, N. Sugii, +4 authors H. Iwai
  • ECS Trans., vol. 2, no. 1, pp. 329–338, May 2006.
  • 2006
3 Excerpts

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

  • J.-A. Ng, Y. Kuroki, +6 authors H. Wong
  • Microelectron. Eng., vol. 80, pp. 206–209, June…
  • 2005
3 Excerpts

Effects of post metallization annealing on electrical characteristics of La2O3 gate thin films

  • A. Kuriyama, S.-I. Ohmi, K. Tsutsui, H. Iwai
  • Jpn. J. Appl. Phys., vol. 44, no. 2, pp. 1045…
  • 2005
2 Excerpts

Thermal stability of lanthanum oxide/Si(100) interfacial transition layer

  • H. Nohira, T. Yoshida, +12 authors T. Hattori
  • ECS Trans., vol. 1, no. 1, pp. 87–96, Oct. 2005.
  • 2005
3 Excerpts

High-κ gate dielectrics: current status and materials properties considerations

  • G. D. Wilk, R. M. Wallace, J. M. Anthony
  • J. Appl. Phys., vol. 89, pp. 5243–5275, May 2001.
  • 2001
2 Excerpts

Similar Papers

Loading similar papers…