• DOI:10.1103/PhysRevB.97.245410
• Corpus ID: 4694298

Effective lattice Hamiltonian for monolayer tin disulfide: Tailoring electronic structure with electric and magnetic fields

@article{Yu2018EffectiveLH,
  title={Effective lattice Hamiltonian for monolayer tin disulfide: Tailoring electronic structure with electric and magnetic fields},
  author={Jin Yu and Edo van Veen and Mikhail I. Katsnelson and Shengjun Yuan},
  journal={Physical Review B},
  year={2018}
}

• Jin Yu, Edo van Veen, +1 author S. Yuan
• Published 5 April 2018
• Physics
• Physical Review B

The electronic properties of monolayer tin dulsulphide (ML-SnS2), a recently synthesized metal dichalcogenide, are studied by a combination of first-principles calculations and tight-binding (TB) approximation. An effective lattice Hamiltonian based on six hybrid sp-like orbitals with trigonal rotation symmetry are proposed to calculate the band structure and density of states for ML-SnS2, which demonstrates good quantitative agreement with relativistic density functional theory calculations in a wide energy range. We show that the proposed TB model can be easily applied to the case of an external electric field, yielding results consistent with those obtained from full Hamiltonian results. In the presence of a perpendicular magnetic field, highly degenerate equidistant Landau levels are obtained, showing typical two-dimensional electron gas behavior. Thus, the proposed TB model provides a simple new way in describing novel properties in ML-SnS2.