Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

@article{Loh2009EffectiveMO,
  title={Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation},
  author={W. Loh and Hasnaa Etienne and B. E. Coss and Injo Ok and D. Turnbaugh and Yohann Spiegel and F. Torregrosa and J. Banti and Laurent Roux and Pui-Yee Hung and Jungwoo Oh and B. Sassman and Kelly Radar and P. Majhi and Hsing-Huang Tseng and Raj Jammy},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1140-1142}
}
Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose (~1 times 1015 cm2) of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at… CONTINUE READING