Effective Mobility in Nano-Scaled n-MOSFETs

Abstract

In this work, we present a methodology for calculating mobility of nano-scaled MOSFET's from the Boltzmann transport equation (BTE). Approximate solution of the BTE for electrons in nano-scaled MOSFET's is given, and the improved distribution function of the carriers is used to model the mobility of carriers. A new model is presented for two-dimensional… (More)

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