Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma

@inproceedings{Xie2011EffectiveEP,
  title={Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma},
  author={Qi Xie and Davy Deduytsche and Marc Schaekers and Matty Caymax and Annelies Delabie and Xin-Ping Qu and Christophe Detavernier},
  year={2011}
}
The O2 plasma pretreatment was investigated for passivation for HfO2 high-k Ge metal-oxide-semiconductor devices. With proper in situ O2 plasma passivation, the capacitance–voltage hysteresis was substantially reduced from 900 to 50 mV for the HfO2/ Ge gate stacks. Capacitors show well-behaved capacitance–voltage characteristics on both pand n-type Ge substrates, indicating an efficient electrical passivation of the Ge interface. The interface trap density for both types of Ge substrates after… CONTINUE READING

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