Effect of uniaxial stress on the polarization of light emitted from GaN ÕAlN quantum dots grown on Si(111)


Cathodoluminescence CL measurements of the ground-state excitonic transition of vertically stacked GaN /AlN quantum dots QDs exhibited an in-plane linear polarization anisotropy in close proximity to microcracks. Microcracks form as a result of a mismatch of the thermal expansion coefficient between the GaN /AlN layers and the Si 111 substrate. In close… (More)


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