Effect of third harmonic peaking in gate drive of class E amplifier

@article{Yano2010EffectOT,
  title={Effect of third harmonic peaking in gate drive of class E amplifier},
  author={Shoko Yano and Kouta Shutou and Tadashi Suetsugu},
  journal={TENCON 2010 - 2010 IEEE Region 10 Conference},
  year={2010},
  pages={1792-1795}
}
In this paper, in order to reduce power dissipation at MOSFET gate port of class E amplifier, we propose gate signal peaking using third harmonic component. With PSPICE simulation, it is shown that higher power efficiency and higher output power of power stage can be obtained using third harmonic component than pure sinusoidal gate signal with same level of gate power dissipation.