Effect of the various doping concentration of BF2+ on polysilicon-gate PMOS

Abstract

This paper presents the effect of various doping concentration of BF<inf>2</inf><sup>+</sup>polysilicon from 10<sup>11</sup> to 10<sup>20</sup> (atoms/cm<sup>3</sup>) for PMOS device using SILVACO TCAD (Technology Computer Aided Design) software. The threshold voltage of polysilicon obtain from I<inf>D</inf>-V<inf>GS</inf> curve was analyzed. The results… (More)

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