Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

@article{Ando2012EffectOT,
  title={Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon},
  author={Yuichiro Ando and Shinya Yamada and Kenji Kasahara and Kentarou Sawano and Masanobu Miyao and Kohei Hamaya},
  journal={arXiv: Materials Science},
  year={2012}
}
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the… 
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