Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

@article{Efremov2006EffectOT,
  title={Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs},
  author={A. A. Efremov and Natalia Bochkareva and Ruslan Gorbunov and D. A. Lavrinovich and Yu. T. Rebane and D. V. Tarkhin and Yu. G. Shreter},
  journal={Semiconductors},
  year={2006},
  volume={40},
  pages={605-610}
}
The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficiency of blue LEDs are studied. It is shown that, for optimal heat removal, decreasing of the LED efficiency as current increases to 100 mA is related to the effect of electric field on the efficiency of carrier injection into the QW. As current… 
View on Springer
page-one.springer.com
212 Citations
Highly Influential Citations
3
Background Citations
37
Methods Citations
1

212 Citations

Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer
In this study, GaN-based light-emitting diodes (LEDs) with and without AlGaInN electron blocking layer (EBL) under self-heating effect are numerically studied. The energy band diagram, carrier…
The nonlinear thermal model of heterojunction light emitting diodes
Feature of heterojunction light-emitting diodes (LEDs) is that their internal quantum efficiency decreases with the growth of temperature and current density, which leads to additional positive…
Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses
Abstract. Optical and electrical properties of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) with various indium gallium nitride (InGaN) quantum well (QW) thicknesses were…
Reduction in the Efficiency-Droop Effect of InGaN Green Light-Emitting Diodes Using Gradual Quantum Wells
The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme…
Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs
A thermoelectric model of a high-power heterojunction LED is developed, and the distributions of temperature and current density in the LED structure are obtained with allowance for several effects…
Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
Optical properties of GaN-based light-emitting diodes (LEDs) are studied numerically by using AlGaN and InAlN electron-blocking layers (EBLs). Through the simulations of emission spectra, carrier…
On the Light Emission in GaN Based Heterostructures at High Injection
For light emitting diodes (LEDs) to be used for general lighting, high efficiencies would need to be retained at high injection levels to meet the intensity and efficiency requirements. In this…
White LED light emission as a function of current and junction temperature
The performance of white LED is highly dependent on the current effect and thermal effect. In this work, a measurement equipment is designed and set up to study the relationships among light output,…
Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode
Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the…
...
...

References

SHOWING 1-10 OF 10 REFERENCES
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and red light have been obtained through the use of InGaN active layers instead of GaN active layers. Red…
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
We markedly improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates. Two new techniques were adopted in the fabrication…
In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation
The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the…
Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant…
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel…
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs…
Degradation and transient currents in III-nitride LEDs
Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The…
Illumination with solid state lighting technology
High-power light-emitting diodes (LEDs) have begun to differentiate themselves from their more common cousins the indicator LED. Today these LEDs are designed to generate 10-100 lm per LED with…
Fundamentals of Heat and Mass Transfer
Completely updated, the seventh edition provides engineers with an in-depth look at the key concepts in the field. It incorporates new discussions on emerging areas of heat transfer, discussing…
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The…