Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
@article{Efremov2006EffectOT, title={Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs}, author={A. A. Efremov and Natalia Bochkareva and Ruslan Gorbunov and D. A. Lavrinovich and Yu. T. Rebane and D. V. Tarkhin and Yu. G. Shreter}, journal={Semiconductors}, year={2006}, volume={40}, pages={605-610} }
The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficiency of blue LEDs are studied. It is shown that, for optimal heat removal, decreasing of the LED efficiency as current increases to 100 mA is related to the effect of electric field on the efficiency of carrier injection into the QW. As current…
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References
SHOWING 1-10 OF 10 REFERENCES
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Materials Science
- 1999
Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and red light have been obtained through the use of InGaN active layers instead of GaN active layers. Red…
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
- Physics
- 2005
The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The…
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
- Materials Science
- 2002
We markedly improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates. Two new techniques were adopted in the fabrication…
In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation
- Physics, Materials Science
- 2001
The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the…
Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
- Physics, Engineering
- 2004
A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant…
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
- Chemistry
- 2003
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel…
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
- Materials Science, Physics
- 2000
1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs…
Degradation and transient currents in III-nitride LEDs
- PhysicsSPIE OPTO
- 2003
Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The…
Illumination with solid state lighting technology
- Physics
- 2002
High-power light-emitting diodes (LEDs) have begun to differentiate themselves from their more common cousins the indicator LED. Today these LEDs are designed to generate 10-100 lm per LED with…
Fundamentals of Heat and Mass Transfer
- Engineering
- 1981
Completely updated, the seventh edition provides engineers with an in-depth look at the key concepts in the field. It incorporates new discussions on emerging areas of heat transfer, discussing…