Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

  title={Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs},
  author={A. A. Efremov and Natalia Bochkareva and Ruslan Gorbunov and D. A. Lavrinovich and Yu. T. Rebane and D. V. Tarkhin and Yu. G. Shreter},
The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficiency of blue LEDs are studied. It is shown that, for optimal heat removal, decreasing of the LED efficiency as current increases to 100 mA is related to the effect of electric field on the efficiency of carrier injection into the QW. As current… 
Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer
In this study, GaN-based light-emitting diodes (LEDs) with and without AlGaInN electron blocking layer (EBL) under self-heating effect are numerically studied. The energy band diagram, carrier
Enhancement in Output Power of Blue Nitride-Based Light-Emitting Diodes With an Electron Retarded Layer
In this study, GaN-based blue light-emitting diodes (LEDs) with an electron retarded layer (ERL) were investigated and demonstrated. The external quantum efficiency (EQE) and efficiency droop effect
The nonlinear thermal model of heterojunction light emitting diodes
Feature of heterojunction light-emitting diodes (LEDs) is that their internal quantum efficiency decreases with the growth of temperature and current density, which leads to additional positive
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The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme
Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs
A thermoelectric model of a high-power heterojunction LED is developed, and the distributions of temperature and current density in the LED structure are obtained with allowance for several effects
Nonlinear thermal model of a heterojunction-based light-emitting diode
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For light emitting diodes (LEDs) to be used for general lighting, high efficiencies would need to be retained at high injection levels to meet the intensity and efficiency requirements. In this


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Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and red light have been obtained through the use of InGaN active layers instead of GaN active layers. Red
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The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The
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We markedly improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates. Two new techniques were adopted in the fabrication
In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation
The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the
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A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant
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The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel
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Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The
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High-power light-emitting diodes (LEDs) have begun to differentiate themselves from their more common cousins the indicator LED. Today these LEDs are designed to generate 10-100 lm per LED with
Fundamentals of Heat and Mass Transfer
Completely updated, the seventh edition provides engineers with an in-depth look at the key concepts in the field. It incorporates new discussions on emerging areas of heat transfer, discussing