Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structures

@article{Acero2015EffectOT,
  title={Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structures},
  author={M. C. Acero and O. Beldarrain and Maria Amor Duch and M. Zabala and M. B. Gonz{\'a}lez and Francesca Campabadal},
  journal={2015 10th Spanish Conference on Electron Devices (CDE)},
  year={2015},
  pages={1-4}
}
Blistering of 11 nm and 45 nm-thick Al<sub>2</sub>O<sub>3</sub> layers deposited by ALD on silicon substrates is studied in Al-Al<sub>2</sub>O<sub>3</sub>-Si structures fabricated using a field isolated process. Blisters are shown to be unevenly distributed and with different dimensions depending on the structure area. After chemical etching down to silicon… CONTINUE READING