Effect of the aspect ratio in AlGaN/GaN HEMT’s DC and small signal parameters

@article{Huque2007EffectOT,
  title={Effect of the aspect ratio in AlGaN/GaN HEMT’s DC and small signal parameters},
  author={M. A. Huque and S. A. Eliza and Tawfiqur Rahman and H I Huq and S. K. Islam},
  journal={2007 International Semiconductor Device Research Symposium},
  year={2007},
  pages={1-2}
}
In this work the effects of the aspect ratio (gate width/ channel length, W/L) in DC and small signal parameters of AlGaN/GaN HEMTs are studied. An analytical model has been developed for theoretical calculation of the device DC performance at different aspect ratios. Experimental results of the fabricated AlGaN/GaN HEMT devices are used to validate the… CONTINUE READING