Effect of substrate misorientation on the InAs / InAlAs / InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

Abstract

The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and… (More)

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