Effect of stress on the evolution of mask-edge defects in ion-implanted silicona)

@inproceedings{Olson2006EffectOS,
  title={Effect of stress on the evolution of mask-edge defects in ion-implanted silicona)},
  author={C. R. Olson and E. Kuryliw and B. E. Jones and Kevin S. Jones},
  year={2006}
}
In an effort to extend the scaling of advanced complementary metal-oxide semiconductor devices, strain has been incorporated to enhance carrier mobility. In this study, the effect of strain on the solid-phase epitaxial regrowth process of patterned wafers was explored. Implants of 1×1015∕cm2 Si+ with an energy of 40keV were introduced into these patterned regions forming a continuous amorphous layer. After implantation, the oxide and nitride masks were removed and the wafers stressed uniaxially… CONTINUE READING

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