Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

@inproceedings{Northrup2012EffectOS,
  title={Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells},
  author={John E. Northrup and Christopher L. Chua and Zhisheng Yang and Thomas Wunderer and Michael Kneissl and Natasha M. Johnson and Tim Kolbe},
  year={2012}
}
  • John E. Northrup, Christopher L. Chua, +4 authors Tim Kolbe
  • Published 2012
  • Physics
  • For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases. This transition depends on various factors that include the strain in the quantum well. Experimental results are presented that illustrate the phenomenon for nitride light emitting diodes (LEDs) grown on sapphire and on bulk AlN. Model… CONTINUE READING

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