Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

@inproceedings{Ruffell2009EffectOO,
  title={Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon},
  author={S. Ruffell and Jeta Vedi and J. E. Bradby and James Williams and Bianca Haberl},
  year={2009}
}
The effect of the local oxygen concentration in ion-implanted amorphous Si (a-Si) on nanoindentation-induced phase transformations has been investigated. Implantation of oxygen into the a-Si films has been used to controllably introduce an approximately constant concentration of oxygen, ranging from ∼1018 to ∼1021 cm−3, over the depth range of the phase transformed zones. Nanoindentation was performed under conditions that ensure a phase transformed zone composed completely of Si-III/XII in the… CONTINUE READING

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