Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation

Abstract

A nitride spacer with an underlying deposited tetraethoxysilane oxide, that behaves as a convenient etch stop layer, is a popular choice for sidewall spacer in modern complementary metal–oxide– semiconductor process flows. In this work we have investigated the effect of the silicon nitride spacer process on the boron profile in silicon and the related dose… (More)

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