Effect of junction capacitance on the rise time of led's and on the turn-on delay of injection lasers

@article{Lee1975EffectOJ,
  title={Effect of junction capacitance on the rise time of led's and on the turn-on delay of injection lasers},
  author={T. Paul Lee},
  journal={The Bell System Technical Journal},
  year={1975},
  volume={54},
  pages={53-68}
}
  • T. Paul Lee
  • Published 1975 in The Bell System Technical Journal
The space-charge capacitance of the forward-biased junction has been found to play a major role in (i) the apparent rise time of the emission from small-area, high-radiance led's and (ii) the apparent turn-on delay of stripe-geometry dh-structure laser diodes. For a zero-bias capacitance of 200 pF, a typical value for such devices made by oxide-masking techniques, the measured rise time of an led that is fully turned on and the turn-on delay time of injection lasers may be as much as twice the… CONTINUE READING
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