Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

@article{Mauder2011EffectOI,
  title={Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates},
  author={C. Mauder and B. Reuters and K. Wang and D. Fahle and A. Trampert and M. V. Rzheutskii and E. V. Lutsenko and G. P. Yablonskii and J. Woitok and M. Chou and M. Heuken and H. Kalisch and R. H. Jansen},
  journal={Journal of Crystal Growth},
  year={2011},
  volume={315},
  pages={246-249}
}
Abstract We report about the optical and structural characterization of m-plane InGaN/GaN multiple quantum well (MQW) structures. All samples were grown on 2-inch LiAlO2 substrates in AIXTRON MOVPE reactors. By lowering the MQW growth temperature, an increase of an indium fraction from 5% to 30% is achieved. High-resolution X-ray diffraction (HRXRD) reciprocal space mapping reveals fully strained growth of the quantum wells. The photoluminescence (PL) peak full width half maximum (FWHM) values… Expand
Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD
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