Effect of impurities on pentacene thin film growth for field-effect transistors

@inproceedings{GomarNadal2007EffectOI,
  title={Effect of impurities on pentacene thin film growth for field-effect transistors},
  author={Elba Gomar-Nadal and Brad R Conrad and William G Cullen and Ellen D. Willams},
  year={2007}
}
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added… CONTINUE READING