• DOI:10.1103/PhysRevB.92.235203
• Corpus ID: 119111930

Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb 1 − x Sn x Te

@article{Geilhufe2015EffectOH,
  title={Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb 1 − x Sn x Te},
  author={Matthias Geilhufe and Sanjeev K. Nayak and Stefan Thomas and Markus Dane and Gouri S. Tripathi and Peter Entel and Wolfram Hergert and Arthur Ernst},
  journal={Physical Review B},
  year={2015},
  volume={92},
  pages={235203}
}

• M. Geilhufe, S. K. Nayak, +5 authors A. Ernst
• Published 17 August 2015
• Materials Science
• Physical Review B

The electronic structure of ${\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}\mathrm{Te}$ is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations $x, {\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}\mathrm{Te}$ is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by the alloy composition. Thus there is a range of potential usage of ${\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}\mathrm{Te}$ for spintronic applications.