Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices.


Hydrogenation of the ZnO:Ga network has been chosen as a promising avenue to further upgrade the optoelectronic and structural properties of the films. With an optimum incorporation of hydrogen at a low substrate temperature (TS = 100 °C) in RF magnetron sputtering plasma, the ZnO:Ga:H film, with a large crystallite size (∼17 nm) and improved crystallinity… (More)
DOI: 10.1039/c6cp03613a