Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

@inproceedings{Luysberg2002EffectOH,
  title={Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates},
  author={Martina Luysberg and D. Kirch and Helmut Trinkaus and Bernhard Holl{\"a}nder and St. Lenk and Siegfried Mantl and Howard J. Herzog and Thomas Hackbarth and Paulo Fernando Papaleo Fichtner},
  year={2002}
}
The influence of He implantation and annealing on the relaxation of Si0.7Ge0.3 layers on Si (100) substrates is investigated. Proper choice of the implantation energy results in a narrow defect band ≈100 nm underneath the substrate/epilayer interface. During annealing at 700–1000 °C, He-filled bubbles are created, which act as sources for misfit dislocations. Efficient annihilation of the threading dislocations is theoretically predicted, if a certain He bubble density with respect to the… CONTINUE READING