Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

@inproceedings{Romanov2014EffectOG,
  title={Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells},
  author={I. S. Romanov and Ilya A. Prudaev and Viktor V. Kopyev and Aleksandr A. Marmalyuk and Vladimir A. Kureshov and D. R. Sabitov and Aleksandr V. Mazalov},
  year={2014}
}
The results of studies of quantum efficiencies for photoluminescence and electroluminescence regimes of blue light-emitting diode structures with InGaN/GaN quantum wells are presented. Experimental samples differed in growth temperature of p-GaN emitter layer. It is shown that increasing of growth temperature of p-GaN layer in temperature range 940-1060 °C leads to decreasing of internal quantum efficiency due to diffusion of magnesium atoms from p-GaN into quantum wells. At the… CONTINUE READING